Samsung Electronics has announced that it has completed the development ofDRAM modules DDR4 first in the world electronics industry last month. Thisdevelopment using 30nm-class process technology, and unbuffered memory modulesprovide dual in-line (UDIMMs) 1.2V 2GB DDR4 to the controller manufacturer fortesting.
The new DRAM module DDR4 can achieve data transfer speeds at 1.2V 2.133Gbps,more power efficient and faster when compared with the 1.35V and 1.5V DDR3DRAM on 30nm process technology which is equivalent, with speeds up to 1.6Gbps.
In the notebook, DDR4 modules will reduce power consumption by 40 percentcompared with 1.5V DDR3 modules.
This module uses Pseudo Open Drain (POD) technology, which allows the DRAMDDR4 to consume only half the electrical current of DDR3 when reading and writingdata. By using a new circuit architecture, DDR4 Samsung will be able to run at up to3.2Gbps, compared with today's typical speed of 1.6Gbps to 800Mbps for DDR3 andDDR2.
Samsung now plans to work closely with a number of server makers to help ensurecompletion JEDEC standardization DDR4 technology in the second half of this year.Samsung develops industry's first DDR DRAM 1997, the first DDR2 DRAM in 2001,and the first DDR3 DRAM using 80nm-class technology in 2005.
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